MECHANICAL RELAXATIONS AND 1/F NOISE IN BI, NB, AND FE FILMS

被引:12
作者
ALERS, GB [1 ]
WEISSMAN, MB [1 ]
机构
[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 14期
关键词
D O I
10.1103/PhysRevB.44.7192
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Anelastic piezoresistance and 1/f noise were measured in the same samples to compare mechanical relaxations with 1/f noise. In bismuth below 200 K, both effects could be fitted to a model invoking one class of mobile defects. In niobium, both the anelastic piezoresistance and the noise scaled with the concentration of dissolved hydrogen. A well-defined peak in noise versus temperature was observed without any peak in the anelastic response. In iron, noise apparently from a carbon Snoek relaxation was observed at 220 K in a sample with high impurity concentration and at 300 K with low impurity concentration. No anelastic feature was found at 220 K in the high-impurity-concentration sample. The broad nature of 1/f noise appears to arise not from a fundamental source but from the generally poor quality of thin films.
引用
收藏
页码:7192 / 7201
页数:10
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