SILICON HOMOEPITAXY WITH ION SPUTTERING .1. MECHANISM OF GROWTH

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] Aleksandrov L. N., 1970, Kristallografiya, V15, P203

[3] GROWTH OF MONOCRYSTALS OF GERMANIUM FROM AN UNDERCOOLED MELT [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1955, 229 (1178): : 346 - &

[4] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[5] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &

[6] EVSEEV AM, 1966, THERMODINAMIKA STRUK

[7] FEDOROV ES, 1915, PRIRODA DEC

[8] PHASE TRANSFORMATIONS OF SI(III) SURFACE [J]. SURFACE SCIENCE, 1970, 22 (02) : 459 - +

[9] GRISDALE RO, 1963, ART SCIENCE GROWING

[10] GUSAROV GF, 1971, ZAVODSK LAB, V37, P566

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] Aleksandrov L. N., 1970, Kristallografiya, V15, P203

[3] GROWTH OF MONOCRYSTALS OF GERMANIUM FROM AN UNDERCOOLED MELT [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1955, 229 (1178): : 346 - &

[4] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[5] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &

[6] EVSEEV AM, 1966, THERMODINAMIKA STRUK

[7] FEDOROV ES, 1915, PRIRODA DEC

[8] PHASE TRANSFORMATIONS OF SI(III) SURFACE [J]. SURFACE SCIENCE, 1970, 22 (02) : 459 - +

[9] GRISDALE RO, 1963, ART SCIENCE GROWING

[10] GUSAROV GF, 1971, ZAVODSK LAB, V37, P566