CHARGE-TRANSFER AT DOUBLE-LAYER TO SINGLE-LAYER TRANSITION IN DOUBLE-QUANTUM-WELL SYSTEMS

被引：26

作者：

KATAYAMA, Y ^{[1
]}

TSUI, DC ^{[1
]}

MANOHARAN, HC ^{[1
]}

PARIHAR, S ^{[1
]}

SHAYEGAN, M ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.52.14817

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experiments on an abrupt double-layer to single-layer transition in double-quantum-well structures are presented. This transition of an electronic system is observed as a sharp decrease in resistance when the top gate is negatively biased. Data on the Shubnikov-de Haas oscillations taken at different gate voltages show that this abrupt decrease in resistance occurs when the system changes from being double-layer to single-layer and is accompanied by transferring of electrons from the top to the bottom layer. A phenomenological model is developed to explain the transition and its dependence on the barrier width of the sample. We also find that the strength of interlayer Coulomb scattering is significantly enhanced before the transition.

引用

页码：14817 / 14824

页数：8

共 35 条

[1] PHASE-SEPARATION, CHARGE-TRANSFER INSTABILITY, AND SUPERCONDUCTIVITY IN THE 3-BAND EXTENDED HUBBARD-MODEL - WEAK-COUPLING THEORY [J].