PHOTO-HALL STUDY OF THE OPTICALLY ENHANCED PHOTOCURRENT IN SEMIINSULATING LEC GAAS

被引：10

作者：

JIMENEZ, J ^{[1
]}

ALVAREZ, A ^{[1
]}

GONZALEZ, MA ^{[1
]}

DESAJA, JA ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,F-34060 MONTPELLIER,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 63卷 / 10期

关键词：

D O I：

10.1016/0038-1098(87)90344-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：937 / 940

页数：4

共 15 条

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[3]

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[5] OPTICALLY ENHANCED DEFECT REACTIONS IN SEMI-INSULATING BULK GAAS [J].

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GONZALEZ, MA ;

HERNANDEZ, P ;

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[6]

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[7]

JIMENEZ J, 1987, IN PRESS PHYS REV B

[8]

Kuszko W., 1986, Materials Science Forum, V10-12, P317, DOI 10.4028/www.scientific.net/MSF.10-12.317

[9] CHARGE-STATE-CONTROLLED STRUCTURAL RELAXATION OF THE EL2 CENTER IN GAAS [J].

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[10] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

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