POSITION OF THE CO-2+ LEVEL IN WIDE-GAP II-VI SEMICONDUCTORS

被引：12

作者：

RADLINSKI, AP

机构：

[1] University of Warsaw, Institute of Experimental Physics, Warsaw

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 21期

关键词：

D O I：

10.1088/0022-3719/12/21/015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Experimental results of the thermal quenching of Co2+ intraimpurity 4T2 to 4A2 infrared luminescence in wide-gap II-VI semiconductors are presented. Several theoretical models are discussed and some arguments are given that the observed phenomenon is due to the position of the Co2+ ground-state level in the forbidden gap of a II-VI semiconductor. Values of ionisation energies of Co 2+ ions are determined.

引用

页码：4477 / 4482

页数：6

共 8 条

[1]

BARANOWSKI JM, 1972, P C PHYSICS SEMICOND, P1001

[2]

Curie D., 1963, LUMINESCENCE CRYSTAL, P190

[3]

Hoogenstraaten W., 1958, PHILIPS RES REP, V13, P515

[4] WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J].