STRAINED INGAAS/ALGAAS QUANTUM-WELL INFRARED DETECTORS AT 4.5 MU-M

被引：34

作者：

FIORE, A

ROSENCHER, E

BOIS, P

NAGLE, J

LAURENT, N

机构：

[1] Laboratoire Central de Recherches de THOMSON-CSF, F-91404 Orsay, Domaine de Corbeville

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.111135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate midinfrared photodetection at lambda=4.5 mu m in a multi-quantum well detector using a strained InGaAs/AlGaAs alloy grown on a GaAs substrate. The detector shows very low dark current of a few pA, a peak unpolarized light responsivity R=12 mA/W for an external 45 degrees angle of incidence, and a background-limited detectivity D*(BL)=4X10(10) cm Hz(1/2)/W at temperatures up to 95 K in the same conditions. This opens the way to high performance 3-5 and 8-12 mu m GaAs-based multispectral detectors

引用

页码：478 / 480

页数：3

共 20 条

[1]

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