EFFECT OF FRICTION ON SURFACE TRAPPING ON SILICON

被引:2
作者
HALL, MB
机构
关键词
D O I
10.1063/1.1729348
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1003 / &
相关论文
共 3 条
[1]   TEMPORARY TRAPS IN SILICON AND GERMANIUM [J].
HAYNES, JR ;
HORNBECK, JA .
PHYSICAL REVIEW, 1953, 90 (01) :152-153
[2]   MICROSECOND TRANSIENT CURRENTS IN THE PULSED TOWNSEND DISCHARGE [J].
HORNBECK, JA .
PHYSICAL REVIEW, 1951, 83 (02) :374-379
[3]   MEASUREMENT OF CARRIER LIFETIMES IN GERMANIUM AND SILICON [J].
STEVENSON, DT ;
KEYES, RJ .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) :190-195