PEAK VALUES OF RESISTIVITY IN HIGH-MOBILITY QUANTUM-HALL-EFFECT SAMPLES

被引：34

作者：

COLERIDGE, PT

ZAWADZKI, P

SACHRAJDA, AS

机构：

[1] Institute for Microstructural Sciences, National Research Council, Ottawa

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.49.10798

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Shubnikov-de Haas oscillations have been studied, at low temperatures, in a high-mobility quantum-Hall-effect sample. A linear increase with increasing magnetic field of the peak values of resistance is observed and is explained quantitatively by a quantum diffusion model with predominantly small-angle scattering. The results are inconsistent with recent suggestions that the peak values of conductivity, between integer-quantum-Hall-effect plateaus, are e2/2h.

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页码：10798 / 10801

页数：4

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