TRAPPING, RECOMBINATION, AND METASTABLE STATES IN N-TYPE ALPHA-SI-H

被引：1

作者：

MAIN, C ^{[1
]}

BERKIN, J ^{[1
]}

RUSSELL, R ^{[1
]}

MERAZGA, A ^{[1
]}

MARSHALL, JM ^{[1
]}

机构：

[1] UNIV WALES UNIV COLL SWANSEA,DEPT MAT ENGN,SWANSEA SA2 8PP,W GLAM,WALES

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90186-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：779 / 782

页数：4

共 9 条

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN AMORPHOUS-SILICON ALLOYS [J].

HACK, M ;

GUHA, S ;

SHUR, M .

PHYSICAL REVIEW B, 1984, 30 (12) :6991-6999

[2] TRANSIENT PHOTOCONDUCTIVITY IN N-TYPE A-SI-H [J].

MAIN, C ;

RUSSELL, R ;

BERKIN, J ;

MARSHALL, JM .

PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (04) :189-195

[3]

MAIN C, 1987, UNPUB

[4] TRANSIENT-PHOTOCURRENT STUDY OF LOCALIZED STATES AT THE CONDUCTION-BAND EDGE OF A-SI-H [J].

OHEDA, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (04) :857-867

[5] EFFECTS OF DOPANTS AND DEFECTS ON LIGHT-INDUCED METASTABLE STATES IN A-SI-H [J].

SKUMANICH, A ;

AMER, NM ;

JACKSON, WB .

PHYSICAL REVIEW B, 1985, 31 (04) :2263-2269

[6] MAJORITY AND MINORITY-CARRIER LIFETIMES IN DOPED A-SI JUNCTIONS AND THE ENERGY OF THE DANGLING-BOND STATE [J].

SPEAR, WE ;

STEEMERS, HL ;

LECOMBER, PG ;

GIBSON, RA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (03) :L33-L40

[7] LOCALIZED STATES IN DOPED AMORPHOUS-SILICON [J].

STREET, RA .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :1-16

[8] RECOMBINATION AT DANGLING BONDS AND STEADY-STATE PHOTOCONDUCTIVITY IN ALPHA-SI-H [J].

VAILLANT, F ;

JOUSSE, D .

PHYSICAL REVIEW B, 1986, 34 (06) :4088-4098

[9] NEW FEATURES OF THE TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN PLASMA-DEPOSITED HYDROGENATED AMORPHOUS-SILICON ALLOYS [J].

VANIER, PE ;

DELAHOY, AE ;

GRIFFITH, RW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5235-5242

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