NEW FEATURES OF THE TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN PLASMA-DEPOSITED HYDROGENATED AMORPHOUS-SILICON ALLOYS

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712

[2] ENHANCED PHOTOCONDUCTIVITY IN NITROGEN-DOPED AMORPHOUS SILICON PREPARED BY DC SPUTTERING [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03): : 403 - 407

[3] BRODIE DE, 1977, AMORPHOUS LIQUID SEM, P472

[4] ANALYSIS OF PHOTOCONDUCTIVITY APPLIED TO CADMIUM-SULFIDE-TYPE PHOTOCONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 234 - 248

[5] MODIFICATIONS IN OPTOELECTRONIC BEHAVIOR OF PLASMA-DEPOSITED AMORPHOUS-SEMICONDUCTOR ALLOYS VIA IMPURITY INCORPORATION [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 391 - 396

[6] HOFFMANN HJ, 1979, FESTKORPERPROBLEME A, V19, P271

[7] OPTICAL-EMISSION SPECTROSCOPY - TOWARD THE IDENTIFICATION OF SPECIES IN THE PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON ALLOYS [J]. SOLAR CELLS, 1980, 2 (04): : 385 - 400

[8] ELECTRONIC AND STRUCTURAL-PROPERTIES OF PLASMA-DEPOSITED A-SI-O-H - STORY OF O2 [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 279 - 284

[9] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[10] SPUTTERED HYDROGENATED AMORPHOUS SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) : 391 - 435

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712

[2] ENHANCED PHOTOCONDUCTIVITY IN NITROGEN-DOPED AMORPHOUS SILICON PREPARED BY DC SPUTTERING [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03): : 403 - 407

[3] BRODIE DE, 1977, AMORPHOUS LIQUID SEM, P472

[4] ANALYSIS OF PHOTOCONDUCTIVITY APPLIED TO CADMIUM-SULFIDE-TYPE PHOTOCONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 234 - 248

[5] MODIFICATIONS IN OPTOELECTRONIC BEHAVIOR OF PLASMA-DEPOSITED AMORPHOUS-SEMICONDUCTOR ALLOYS VIA IMPURITY INCORPORATION [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 391 - 396

[6] HOFFMANN HJ, 1979, FESTKORPERPROBLEME A, V19, P271

[7] OPTICAL-EMISSION SPECTROSCOPY - TOWARD THE IDENTIFICATION OF SPECIES IN THE PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON ALLOYS [J]. SOLAR CELLS, 1980, 2 (04): : 385 - 400

[8] ELECTRONIC AND STRUCTURAL-PROPERTIES OF PLASMA-DEPOSITED A-SI-O-H - STORY OF O2 [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 279 - 284

[9] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[10] SPUTTERED HYDROGENATED AMORPHOUS SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) : 391 - 435