A MODEL OF DIAMOND GROWTH IN LOW-PRESSURE PREMIXED FLAMES

被引:29
作者
KIM, JS
CAPPELLI, MA
机构
[1] High Temperature Gasdynamics Laboratory, Stanford University, Stanford
关键词
D O I
10.1063/1.351989
中图分类号
O59 [应用物理学];
学科分类号
摘要
Recognizing the potential importance of diamond thin film growth from combustion environments, a computational investigation of diamond synthesis in low pressure premixed flames has been conducted. The model employed solves the two-dimensional continuity, momentum, global energy, and species conservation equations in stagnation point flow geometry, and accounts for gas phase and surface reaction kinetics. The heterogeneous mechanism employed to describe diamond growth assumes that the methyl radical is the primary growth precursor. The gas phase mechanism includes elementary reaction pathways which generate methyl radicals from acetylene and in addition, includes a mechanism for cyclization (the formation of benzene) via acetylene and ethylene precursors. In this way, the pathway towards soot formation, which is believed to be a consequence of the formation of fused polycyclic aromatics, is shown to be a possible explanation for an eventual decrease in diamond growth rates at increasing fuel to oxygen flow ratios. A competition between oxidative pyrolysis of post flame hydrocarbons and cyclization establishes a criterion for optimum growth conditions.
引用
收藏
页码:5461 / 5466
页数:6
相关论文
共 37 条
[1]   RAPID GROWTH OF DIAMOND FILMS BY ARC-DISCHARGE PLASMA CVD [J].
AKATSUKA, F ;
HIROSE, Y ;
KOMAKI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09) :L1600-L1602
[2]   LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].
ANGUS, JC ;
HAYMAN, CC .
SCIENCE, 1988, 241 (4868) :913-921
[3]  
[Anonymous], 1968, BOUNDARY LAYER THEOR
[4]  
Bastin E., 1988, 22 S INT COMB COMB I, V22, P313
[5]  
BREZINSKY K, 1987, 194TH NAT M AM CHEM
[6]  
CAPPELLI MA, 1989, J APPL PHYS, V67, P2602
[7]   A MATHEMATICAL-MODEL OF THE FLUID-MECHANICS AND GAS-PHASE CHEMISTRY IN A ROTATING-DISK CHEMICAL VAPOR-DEPOSITION REACTOR [J].
COLTRIN, ME ;
KEE, RJ ;
EVANS, GH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (03) :819-829
[8]  
COLTRIN MR, 1990, SAND908003 SAND REP
[9]  
COOPER JA, 1990, SPIE, V1325, P41
[10]  
Frenklach M, 1985, P COMBUST INST, V20, P887, DOI DOI 10.1016/S0082-0784(85)80578-6