THE INFLUENCE OF THERMAL RELAXATION ON IMPLANTATION INDUCED DISORDER ACCUMULATION

被引：6

作者：

CARTER, G

KATARDJIEV, IV

NOBES, MJ

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1988年 / 105卷 / 3-4期

关键词：

D O I：

10.1080/00337578808229948

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：211 / 223

页数：13

共 18 条

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[2]

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[3] AMORPHISATION OF SOLIDS BY ION-IMPLANTATION [J].

CARTER, G ;

GRANT, WA .

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CARTER, G ;

WEBB, R .

RADIATION EFFECTS LETTERS, 1979, 43 (01) :19-24

[5]

CARTER G, 1967, ION IMPLANTATION SEM

[6]

CARTER G, 1986, RADIAT EFF, V100, P281

[7]

CHADDERTON LT, 1970, RADIAT EFF, V8, P77

[8]

DENNIS JR, 1978, J APPL PHYS, V49, P119

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1062-&

[10]

Kelly R., 1970, Atomic collision phenomena in solids, P172