HIGH PHOTOCONDUCTIVE GAIN IN LATERAL INASSB STRAINED-LAYER SUPERLATTICE INFRARED DETECTORS

被引：34

作者：

KURTZ, SR

BIEFELD, RM

DAWSON, LR

FRITZ, IJ

ZIPPERIAN, TE

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 20期

关键词：

D O I：

10.1063/1.100336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1961 / 1963

页数：3

共 8 条

[1]

BIEFELD RM, IN PRESS J CRYST GRO

[2] DOPING SUPERLATTICES (N-I-P-I CRYSTALS) [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1682-1695

[3]

KRUSE PW, 1970, SEMICONDUCT SEMIMET, V5, P15

[4] DEMONSTRATION OF AN INASSB STRAINED-LAYER SUPERLATTICE PHOTODIODE [J].

KURTZ, SR ;

DAWSON, LR ;

ZIPPERIAN, TE ;

LEE, SR .

APPLIED PHYSICS LETTERS, 1988, 52 (19) :1581-1583

[5] EXTENDED INFRARED RESPONSE OF INASSB STRAINED-LAYER SUPERLATTICES [J].

KURTZ, SR ;

OSBOURN, GC ;

BIEFELD, RM ;

DAWSON, LR ;

STEIN, HJ .

APPLIED PHYSICS LETTERS, 1988, 52 (10) :831-833

[6] PHOTOLUMINESCENCE AND THE BAND-STRUCTURE OF INASSB STRAINED-LAYER SUPERLATTICES [J].

KURTZ, SR ;

OSBOURN, GC ;

BIEFELD, RM ;

LEE, SR .

APPLIED PHYSICS LETTERS, 1988, 53 (03) :216-218

[7] INASSB STRAINED-LAYER SUPERLATTICES FOR LONG WAVELENGTH DETECTOR APPLICATIONS [J].

OSBOURN, GC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :176-178

[8]

RITTNER ES, 1956, PHOTOCONDUCTIVITY C, P215

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