LO-PHONON-ASSISTED EMISSION EDGE OF FREE-EXCITONS IN GAAS AND GAAS/GAXAL1-XAS QUANTUM WELLS

被引：6

作者：

SHANABROOK, BV ^{[1
]}

RUDIN, S ^{[1
]}

REINECKE, TL ^{[1
]}

TSENG, W ^{[1
]}

NEWMAN, P ^{[1
]}

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.41.1577

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence data and theoretical calculations are given for the LO-phonon-assisted free-exciton emission edge in bulk GaAs and in GaAs/GaxAl1-xAs quantum wells for temperatures up to 90 K. The observed temperature dependence of the emission edge and the change of the intensity between the bulk case and the quantum-well case is in accord with theory. Evidence also is given for the observation of the two LO-phonon-assisted free-exciton emission edge in the quantum-well system. © 1990 The American Physical Society.

引用

页码：1577 / 1580

页数：4

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