UNSTRAINED, MODULATION-DOPED, IN0.3GA0.7AS/IN0.29AL0.71AS FIELD-EFFECT TRANSISTOR GROWN ON GAAS SUBSTRATE

被引：15

作者：

TIEN, NC

CHEN, JH

FERNANDEZ, JM

WIEDER, HH

机构：

[1] Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.192864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication, structure, and properties of unstrained, modulation-doped, 1-mum-long and 10-mum-wide gate, field-effect transistors made of In0.3Ga0.7As / In0.029Al0.71As heterojunctions grown on GaAs substrates using compositionally step-graded buffer layers are described. These devices have a transconductance of 335 mS / mm, f(max) of 56 GHz, and a gate breakdown voltage of 23.5 V.

引用

收藏

页码：621 / 623

页数：3

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