SILICON - SEMICONDUCTOR PROPERTIES

被引：17

作者：

SCHULTZ, ML

机构：

来源：

INFRARED PHYSICS | 1964年 / 4卷 / 02期

关键词：

D O I：

10.1016/0020-0891(64)90015-6

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：93 / &

共 127 条

[1] RECOMBINATION OF ELECTRONS AND DONORS IN SEMICONDUCTORS [J].

ASCARELLI, G ;

RODRIGUEZ, S .

BECKER, M ;

FAN, HY .

PHYSICAL REVIEW, 1949, 76 (10) :1531-1532

[3] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J].

BEMSKI, G .

PHYSICAL REVIEW, 1958, 111 (06) :1515-1518

[4]

BEMSKI G, 1956, M ELECTROCHEMICAL SO

[5] THEORY OF MOBILITY OF ELECTRONS IN SOLIDS [J].

BLATT, FJ .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 4 :199-363

[6]

BRECKENRIDGE RG, 1956, PHOTOCONDUCTIVITY ED, P353

[7]

BRECKENRIDGE RG, 1956, PHOTOCONDUCTIVITY CO, P321

[8]

BRECKENRIDGE RG, 1956, PHOTOCONDUCTIVITY ED, P215

[9] INFRA-RED ABSORPTION IN SILICON [J].

BRIGGS, HB .

PHYSICAL REVIEW, 1950, 77 (05) :727-728

[10] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J].

BROCKHOUSE, BN .