CRYOGENIC GROWTH OF AL NITRIDE ON GAAS(110) - X-RAY-PHOTOEMISSION SPECTROSCOPY AND INVERSE-PHOTOEMISSION SPECTROSCOPY

被引:12
作者
PARK, KT
GAO, Y
机构
[1] Department of Physics and Astronomy, University of Rochester, Rochester
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 08期
关键词
D O I
10.1103/PhysRevB.47.4491
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on our recent studies of Al nitride growth on GaAs(110) formed by depositing Al onto a condensed ammonia overlayer on GaAs(110) at T=90 K using x-ray-photoemission spectroscopy and inverse-photoemission spectroscopy. We have also investigated the temperature dependence of the interface thus formed. The results show some limited amount of Al nitride formed at T=90 K even though the reaction is slow, but the overlayer mostly remains metallic until the substrate is heated up. Much of the reaction of Al with ammonia occurs at about T=170 K, above which the overlayer becomes insulating. The combined information from occupied and unoccupied states reveals new features of the interface formation, and is consistent with our previous synchrotron photoemission studies of Al/NH3/GaAs(100).
引用
收藏
页码:4491 / 4497
页数:7
相关论文
共 42 条
  • [1] INP(110) OXIDATION WITH O2, NO, AND N2O AT 20 K - TEMPERATURE AND PHOTON-ENERGY DEPENDENCIES
    ANDERSON, SG
    CHEN, Y
    SEO, JM
    WEAVER, JH
    [J]. PHYSICAL REVIEW B, 1991, 43 (12): : 9621 - 9625
  • [2] Avci R., 1989, Review of Scientific Instruments, V60, P3643, DOI 10.1063/1.1140469
  • [3] FORMATION OF ALUMINUM NITRIDE FILMS ON GAAS(110) AT ROOM-TEMPERATURE BY REACTIVE MOLECULAR-BEAM EPITAXY - X-RAY AND SOFT-X-RAY PHOTOEMISSION SPECTROSCOPY
    BAIER, HU
    MONCH, W
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) : 586 - 590
  • [4] SYSTEMATIC STUDY OF THE SURFACE PHOTOVOLTAIC EFFECT IN PHOTOEMISSION
    BAUER, A
    PRIETSCH, M
    MOLODTSOV, S
    LAUBSCHAT, C
    KAINDL, G
    [J]. PHYSICAL REVIEW B, 1991, 44 (08): : 4002 - 4005
  • [5] PHOTOEMISSION-STUDIES OF THE REACTIONS OF AMMONIA AND N-ATOMS WITH SI(100)-(2X1) AND SI(111)-(7X7) SURFACES
    BOZSO, F
    AVOURIS, P
    [J]. PHYSICAL REVIEW B, 1988, 38 (06): : 3937 - 3942
  • [6] CONFIRMATION OF THE TEMPERATURE-DEPENDENT PHOTOVOLTAIC EFFECT ON FERMI-LEVEL MEASUREMENTS BY PHOTOEMISSION SPECTROSCOPY
    CHANG, S
    VITOMIROV, IM
    BRILLSON, LJ
    RIOUX, DF
    KIRCHNER, PD
    PETTIT, GD
    WOODALL, JM
    HECHT, MH
    [J]. PHYSICAL REVIEW B, 1990, 41 (17): : 12299 - 12302
  • [7] COHEN MH, 1975, J PHYS CHEM-US, V79, P2900, DOI 10.1021/j100593a020
  • [8] ELECTRONIC AND IONIC STRUCTURES OF METAL-AMMONIA SOLUTIONS
    COHEN, MH
    THOMPSON, JC
    [J]. ADVANCES IN PHYSICS, 1968, 17 (70) : 857 - &
  • [9] FELNERFELDEGG H, 1974, J ELECTRON SPECTROSC, V5, P643
  • [10] IMPROVEMENT OF THE ELECTRICAL-PROPERTIES OF THE AIN GAAS MIS SYSTEM AND THEIR THERMAL-STABILITY BY GAAS SURFACE STOICHIOMETRY CONTROL
    FUJIEDA, S
    MIZUTA, M
    MATSUMOTO, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (03): : L296 - L299