INAS A1SB DOUBLE-BARRIER STRUCTURE WITH LARGE PEAK-TO-VALLEY CURRENT RATIO - A CANDIDATE FOR HIGH-FREQUENCY MICROWAVE DEVICES

被引：35

作者：

SODERSTROM, JR ^{[1
]}

CHOW, DH ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,TJ WATSON SR LAB APPL PHYS,PASADENA,CA 91125

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 01期

关键词：

D O I：

10.1109/55.46920

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report negative differential resistance (NDR) in InAs/ AlSb/InAs/AlSb/InAs double-barrier structures with peak-to-valley current (PVC) ratios as large as 11 (28) at room temperature (77 K). This is a large improvement over previous results for these materials, and also considerably better than those obtained for the extensively studied GaAs/ AlGaAs material system. We have also improved the peak current density by reducing the barrier thickness and observed values exceeding 105 A/ cm2. These results suggest that InAs/AlSb structures are interesting alternatives to conventional GaAs/AlGaAs structures in high-frequency devices. We also report NDR in a InAs/AlSb superlattice double-barrier structure, with a lower PVC ratio than in the solid barrier case. This result indicates that valley current contributions arising from Y-point tunneling are negligible in these structures, consistent with the large band offset. © 1990 IEEE

引用

页码：27 / 29

页数：3