A DISPLACED MAXWELLIAN APPROACH TO BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS

被引：10

作者：

ROSENCHER, E

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 38卷 / 12期

关键词：

D O I：

10.1016/0038-1098(81)91009-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1293 / 1295

页数：3

共 9 条

[1] CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS [J].

BACCARANI, G ;

JACOBONI, C ;

MAZZONE, AM .

SOLID-STATE ELECTRONICS, 1977, 20 (01) :5-10

[2]

BOSH R, 1974, IEEE T ELECTRON DEV, V21, P16

[3]

CONWELL EM, 1967, SOLID STATE PHYSI S9

[4] ELECTRON-ENERGY RELAXATION-TIME IN SI AND GE [J].

COSTATO, M ;

FONTANESI, S ;

REGGIANI, L .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (03) :547-564

[5] INFLUENCE OF ABRUPT ELECTRIC-FIELD VARIATIONS ON THE DISTRIBUTIONS FUNCTION OF HOT-ELECTRONS [J].

MIHNEA, A ;

GURAU, I .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (12) :973-980

[6] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J].

RUCH, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :652-&

[7]

SEEGER K, 1973, SEMICONDUCTOR PHYSIC

[8] NEAR BALLISTIC ELECTRON-TRANSPORT IN GAAS DEVICES AT 77-DEGREES-K [J].

SHUR, MS ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1981, 24 (01) :11-18

[9] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].

SHUR, MS ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683

← 1 →