A COMPARISON OF RADIATION-DAMAGE IN TRANSISTORS FROM CO-60 GAMMA-RAYS AND 2.2 MEV ELECTRONS

被引:14
作者
NICHOLS, DK
PRICE, WE
GAUTHIER, MK
机构
关键词
D O I
10.1109/TNS.1982.4336480
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1970 / 1974
页数:5
相关论文
共 4 条
[1]  
PRICE WE, 1981, JPL8166 PUBL, V2
[2]  
PRICE WE, 1981, JPL8166 PUBL, V1
[3]  
TADA HY, 1977, JPL7756 PUBL
[4]   CORRELATION OF DISPLACEMENT EFFECTS PRODUCED BY ELECTRONS PROTONS AND NEUTRONS IN SILICON [J].
VANLINT, VAJ ;
GIGAS, G ;
BARENGOLTZ, J .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2663-2668