IMPROVEMENT OF VOC FOR MU-C-SI-H POLY-SI P-N-JUNCTION SOLAR-CELLS

The p-n junction solar cells consisting of p-type hydrogenated microcrystalline silicon (p-mu-c-Si:H) and n-type single crystalline silicon (n-c-Si) or cast polycrystalline silicon (n-poly-Si) have been investigated. By inserting a thin oxide layer (SiO(x)) between p-mu-c-Si:H and n-c-Si or n-poly-Si and by optimizing fabrication processes, V(oc) as high as 648 mV was obtained for the p-mu-c-Si/SiO(x)/n-c-Si cell, and 623 mV for the p-mu-c-Si:H/SiO(x)/n-poly-Si cell. The effects and role of the inserted oxide layer in the p-mu-c-Si:H/n-c-Si cell are discussed.