CR-2+ INTERNAL LUMINESCENCE IN GAALAS

被引：3

作者：

DEVEAUD, B ^{[1
]}

LAMBERT, B ^{[1
]}

LHARIDON, H ^{[1
]}

PICOLI, G ^{[1
]}

机构：

[1] UNIV RENNES,IUT LANNION,RENNES,FRANCE

来源：

JOURNAL OF LUMINESCENCE | 1981年 / 24-5卷 / NOV期

关键词：

D O I：

10.1016/0022-2313(81)90270-2

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：273 / 276

页数：4

共 15 条

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[3]

DEVEAUD B, 1980, REV PHYS APPL, V15, P671, DOI 10.1051/rphysap:01980001503067100

[4]

DEVEAUD B, 1981, 3RD LUND C SOUTHB

[5]

Eaves L., 1981, Physics in High Magnetic Fields. Proceedings of the Oji International Seminar, P130

[6]

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[7] INVESTIGATION OF THE ABSORPTION OF CR2+(3D4) IN GAAS [J].

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CLERJAUD, B .

PHYSICAL REVIEW B, 1981, 23 (08) :3933-3942

[8] ABSORPTION AND LUMINESCENCE OF CR2+(D4) IN II-VI-COMPOUNDS [J].

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UBA, SM ;

VALLIN, JT .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (11) :2197-2214

[9] PROPERTIES OF CR DEEP LEVELS IN ALXGA1-XAS-CR [J].

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PEARSON, GL .

PHYSICAL REVIEW B, 1979, 19 (04) :2059-2063

[10] PHOTOLUMINESCENCE FROM DEEP CENTERS IN GAAS [J].

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SOLID STATE COMMUNICATIONS, 1976, 19 (06) :521-524

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