PROPERTIES OF CR DEEP LEVELS IN ALXGA1-XAS-CR

被引：6

作者：

KOCOT, K ^{[1
]}

RAO, RA ^{[1
]}

PEARSON, GL ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.19.2059

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Studies have been conducted which clarify the mechanism producing the 0.8-eV photoluminescent band in AlxGa1-xAs:Cr. Photocapacitance was employed to measure the optical ionization energies of Cr2+ with respect to the conduction and valence bands as a function of composition x. It was shown that the sum of the optical ionization energies of Cr2+ exceeds the direct energy gap by an amount E, the magnitude of which decreases with increase in x. An explanation of this result is given in terms of the conduction-band structure and Stokes' shift. Photoconductivity measurements were carried out which establish the degeneracy range of the Cr2+(E5) excited level with respect to the conduction band as x is varied from 0 to 0.6. Alternate models of photoluminescent intraimpurity transitions from Cr levels in n- and p-type crystals are analyzed. © 1979 The American Physical Society.

引用

页码：2059 / 2063

页数：5

共 13 条

[1]

INSTONE L, 1978, J PHYS C, V11, pL771

[2] DEEP TRAPS IN SEMI-INSULATING GAAS - CR REVEALED BY PHOTO-SENSITIVE ESR [J].