DEFECT CENTERS IN OXYGEN-DEFICIENT RF-SPUTTERED SIO2-FILMS .1. ELECTRON-SPIN RESONANCE

被引：21

作者：

HICKMOTT, TW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.1663367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1050 / 1059

页数：10

相关论文

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