GROWTH OF ZNS THIN-FILMS BY LIQUID-PHASE ATOMIC LAYER EPITAXY (LPALE)

被引：47

作者：

LINDROOS, S

KANNIAINEN, T

LESKELA, M

机构：

[1] Department of Chemistry, University of Helsinki, FIN-00014 Helsinki

来源：

APPLIED SURFACE SCIENCE | 1994年 / 75卷

关键词：

D O I：

10.1016/0169-4332(94)90138-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnS thin films were grown by the LPALE method on soda lime glass, ITO- and Al2O3-covered glass and Si substrates. 0.05-0.2M ZnCl2 and Na2S solutions were used as immersion solutions. Immersion time was 20 s. Depending on the concentrations the rinsing time was 100-200 s and the flow rate of water 600-800 ml/min. The growth rate was 0.7-0.8 Angstrom/cycle with concentrations ZnCl2 0.1M and Na2S 0.05M, and 1.7-2.0 Angstrom/cycle with doubled concentrations. The appearance of the films was smooth and no cracks could be detected. The films were polycrystalline with presumably cubic structure and showed slight (111) preferential orientation. The S/Zn ratio was approximately 0.8 and the films contain uniformly distributed oxygen.

引用

页码：70 / 74

页数：5

共 22 条

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