ION INCIDENT ANGLE DEPENDENCE OF RIDGE SHAPES FORMED ON [111] ORIENTED GD3GA5O12 BY ION-BEAM ETCHING

被引:5
作者
KATOH, Y
SUGIMOTO, N
TATE, A
SHIBUKAWA, A
机构
[1] NTT Opto-Electronics Laboratories, Tokai, Ibaraki
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 5A期
关键词
GARNET; WAVE-GUIDE; OPTICAL ISOLATOR; ION-BEAM ETCHING;
D O I
10.1143/JJAP.31.L591
中图分类号
O59 [应用物理学];
学科分类号
摘要
A ridge pattern is formed on a [111] oriented Gd3Ga5O12 (GGG) substrate using an argon ion-beam etching at various ion incident angles between 90-degrees and 45-degrees. The relation between the ridge shapes and the ion incident angles is studied. The applicability of a phosphoric acid treatment after the ion-beam etching to smooth the ridge side wall is also examined. The ridge shape strongly depends on the ion incident angle. The phosphoric acid treatment causes a noticeable change of ridge shape dependent on the GGG crystal structure.
引用
收藏
页码:L591 / L593
页数:3
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