LATTICE THERMAL CONDUCTIVITY OF SEMICONDUCTORS . A CHEMICAL BOND APPROACH

[1] ABDULLAEV GB, 1964, IZV AN SSSR FIZ, V28, P1096

[2] AIGRAIN P, 1962, TABLES CONSTANTES SE

[3] ELECTRON AND PHONON SCATTERING IN GAAS AT HIGH TEMPERATURES [J]. PHYSICAL REVIEW, 1965, 138 (4A): : 1270 - +

[4] ARMITAGE D, 1968, 5 ANN SOL STAT C

[5] PREPARATION AND PROPERTIES OF SILICON TELLURIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1593 - &

[6] BALANEVSKAYA AE, 1966, INORG MATER, V2, P691

[7] BALLESTRACCI R, 1966, CR ACAD SCI C CHIM, V262, P1253

[8] BERGER LI, 1965, INORG MATER, V1, P470

[9] BIRKHOLZ U, 1958, Z NATURFORSCH PT A, V13, P780

[10] BOBONE R, 1961, ADV ENERG CONVERS, V1, P149

[1] ABDULLAEV GB, 1964, IZV AN SSSR FIZ, V28, P1096

[2] AIGRAIN P, 1962, TABLES CONSTANTES SE

[3] ELECTRON AND PHONON SCATTERING IN GAAS AT HIGH TEMPERATURES [J]. PHYSICAL REVIEW, 1965, 138 (4A): : 1270 - +

[4] ARMITAGE D, 1968, 5 ANN SOL STAT C

[5] PREPARATION AND PROPERTIES OF SILICON TELLURIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1593 - &

[6] BALANEVSKAYA AE, 1966, INORG MATER, V2, P691

[7] BALLESTRACCI R, 1966, CR ACAD SCI C CHIM, V262, P1253

[8] BERGER LI, 1965, INORG MATER, V1, P470

[9] BIRKHOLZ U, 1958, Z NATURFORSCH PT A, V13, P780

[10] BOBONE R, 1961, ADV ENERG CONVERS, V1, P149