NANOSTRUCTURE FABRICATION USING LITHIUM-FLUORIDE FILMS AS AN ELECTRON-BEAM RESIST

被引：22

作者：

LANGHEINRICH, W

SPANGENBERG, B

BENEKING, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.585976

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Homogeneous and quasiamorphous lithium fluoride based films have been deposited as a new ultrahigh resolution electron beam resist. The exposure characteristics of this self-developing positive tone resist are discussed. Compared to other metal halide films, a high sensitivity is the most important advantage, while the resolution limit is also far below 10 nm. Concerning pattern transfer, the properties of this resist in var-ious reactive ion etch processes and the capability for a lift-off process were investigated.

引用

页码：2868 / 2872

页数：5

共 13 条

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