GENERALIZED MATSUBARA-TOYOZAWA THEORY FOR THE SPECIFIC-HEAT IN HEAVILY-PHOSPHORUS-DOPED SILICON

被引：22

作者：

CHAO, KA

FERREIRADASILVA, A

机构：

[1] Department of Physics and Measurement Technology, University of Linköping, Linköping

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.19.4125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The previously developed theory for impurity bands in heavily doped semiconductors is used to calculate the specific heat of Si: P. It gives rough agreement with experimental data over a wide range of impurity concentration around the critical concentration for metal-nonmetal transition. Recent calculations based on the highly-correlated-electron-gas model are included for comparison. © 1979 The American Physical Society.

引用

页码：4125 / 4129

页数：5