MONOLAYER RESOLVED MONITORING OF ALAS GROWTH WITH METALORGANIC MOLECULAR-BEAM EPITAXY BY REFLECTANCE ANISOTROPY SPECTROSCOPY

被引：9

作者：

RUMBERG, J ^{[1
]}

REINHARDT, F ^{[1
]}

RICHTER, W ^{[1
]}

FARRELL, T ^{[1
]}

ARMSTRONG, J ^{[1
]}

机构：

[1] UNIV LIVERPOOL,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.587991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metalorganic molecular beam epitaxial growth of AlAs on GaAs and AlAs surfaces was monitored by reflectance anisotropy spectroscopy (RAS) to determine to association of growth rate and RAS monolayer oscillations. RAS spectra similar to molecular beam epitaxy and metalorganic vapor phase epitaxy spectra were obtained. Results confirmed that AlAs growth on both surfaces produced RAS signal oscillations with a period corresponding to growth of one AlAs monolayer. AlAs growth on GaAs was observed to be erratic at the start but progressively stabilized after deposition of several layers.

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页码：88 / 91

页数：4

相关论文

共 14 条

[1] INSITU INVESTIGATION OF THE LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF LATTICE-MISMATCHED SEMICONDUCTORS USING REFLECTANCE ANISOTROPY MEASUREMENTS [J].

ACHER, O ;

KOCH, SM ;

OMNES, F ;

DEFOUR, M ;

RAZEGHI, M ;

DREVILLON, B .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3564-3577

[2] A RHEED AND REFLECTANCE ANISOTROPY STUDY OF THE MBE GROWTH OF GAAS, ALAS AND INAS ON GAAS(001) [J].

ARMSTRONG, SR ;

HOARE, RD ;

PEMBLE, ME ;

POVEY, IM ;

STAFFORD, A ;

TAYLOR, AG ;

JOYCE, BA ;

NEAVE, JH ;

KLUG, DR ;

ZHANG, J .

SURFACE SCIENCE, 1992, 274 (02) :263-269

[3] OPTICAL-PROPERTIES OF ALXGA1-XAS [J].

ASPNES, DE ;

KELSO, SM ;

LOGAN, RA ;

BHAT, R .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767

[4] ABOVE-BANDGAP OPTICAL ANISOTROPIES IN CUBIC SEMICONDUCTORS - A VISIBLE NEAR ULTRAVIOLET PROBE OF SURFACES [J].

ASPNES, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1498-1506

[5] DYNAMIC OPTICAL REFLECTIVITY TO MONITOR THE REAL-TIME METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF ALGAAS LAYERS [J].

FARRELL, T ;

ARMSTRONG, JV ;

KIGHTLEY, P .

APPLIED PHYSICS LETTERS, 1991, 59 (10) :1203-1205

[6] OSCILLATIONS IN THE OPTICAL-RESPONSE OF (001)GAAS AND ALGAAS SURFACES DURING CRYSTAL-GROWTH BY MOLECULAR-BEAM EPITAXY [J].

HARBISON, JP ;

ASPNES, DE ;

STUDNA, AA ;

FLOREZ, LT ;

KELLY, MK .

APPLIED PHYSICS LETTERS, 1988, 52 (24) :2046-2048

[7] OPTICAL-DETECTION OF GROWTH OSCILLATIONS IN HIGH-VACUUM METALORGANIC VAPOR-PHASE EPITAXY [J].

JONSSON, J ;

DEPPERT, K ;

JEPPESEN, S ;

PAULSSON, G ;

SAMUELSON, L ;

SCHMIDT, P .

APPLIED PHYSICS LETTERS, 1990, 56 (24) :2414-2416

[8]

JONSSON J, 1994, APPL PHYS LETT, V64, P1998, DOI 10.1063/1.111718

[9] REFLECTANCE-DIFFERENCE SPECTROSCOPY OF (001) GAAS-SURFACES IN ULTRAHIGH-VACUUM [J].

KAMIYA, I ;

ASPNES, DE ;

FLOREZ, LT ;

HARBISON, JP .

PHYSICAL REVIEW B, 1992, 46 (24) :15894-15904

[10] DIMER FORMATION ON (001) GAAS UNDER ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH-CONDITIONS [J].

KAMIYA, I ;

ASPNES, DE ;

TANAKA, H ;

FLOREZ, LT ;

HARBISON, JP ;

BHAT, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1716-1719