OSCILLATIONS IN THE OPTICAL-RESPONSE OF (001)GAAS AND ALGAAS SURFACES DURING CRYSTAL-GROWTH BY MOLECULAR-BEAM EPITAXY

被引：90

作者：

HARBISON, JP

ASPNES, DE

STUDNA, AA

FLOREZ, LT

KELLY, MK

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 24期

关键词：

D O I：

10.1063/1.99576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2046 / 2048

页数：3

共 27 条

[1] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001) [J].

ASPNES, DE ;

HARBISON, JP ;

STUDNA, AA ;

FLOREZ, LT .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1687-1690

[2] APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS [J].

ASPNES, DE ;

HARBISON, JP ;

STUDNA, AA ;

FLOREZ, LT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1327-1332

[3] REFLECTANCE-DIFFERENCE SPECTROSCOPY SYSTEM FOR REAL-TIME MEASUREMENTS OF CRYSTAL-GROWTH [J].

ASPNES, DE ;

HARBISON, JP ;

STUDNA, AA ;

FLOREZ, LT .

APPLIED PHYSICS LETTERS, 1988, 52 (12) :957-959

[4] PHASE-LOCKED RHEED OSCILLATIONS DURING MBE GROWTH OF GAAS AND ALXGA1-XAS [J].

BRIONES, F ;

GOLMAYO, D ;

GONZALEZ, L ;

RUIZ, A .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :19-25

[5] SURFACE STOICHIOMETRY AND MORPHOLOGY OF MBE GROWN (001)GAAS THROUGH THE ANALYSIS OF RHEED OSCILLATIONS [J].

BRIONES, F ;

GOLMAYO, D ;

GONZALEZ, L ;

DEMIGUEL, JL .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L478-L480

[6] GALLIUM-INDUCED AND ARSENIC-INDUCED OSCILLATIONS OF INTENSITY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN THE GROWTH OF (001) GAAS BY CHEMICAL BEAM EPITAXY [J].

CHIU, TH ;

TSANG, WT ;

CUNNINGHAM, JE .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2302-2307

[7] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF EPITAXIAL-GROWTH ON SEMICONDUCTOR SURFACES [J].

COHEN, PI ;

PUKITE, PR ;

VANHOVE, JM ;

LENT, CS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1251-1258

[8] PHOTOEMISSION OSCILLATIONS DURING EPITAXIAL-GROWTH [J].

ECKSTEIN, JN ;

WEBB, C ;

WENG, SL ;

BERTNESS, KA .

APPLIED PHYSICS LETTERS, 1987, 51 (22) :1833-1835

[9] THE OBSERVATION OF OSCILLATIONS IN SECONDARY-ELECTRON EMISSION DURING THE GROWTH OF GAAS BY MBE [J].

ERICKSON, LP ;

LONGERBONE, MD ;

YOUNGMAN, RC ;

DIES, BE .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :55-58

[10] MOLECULAR-BEAM EPITAXY GROWTH MECHANISMS ON GAAS(100) SURFACES [J].

FARRELL, HH ;

HARBISON, JP ;

PETERSON, LD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1482-1489

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