THE OBSERVATION OF OSCILLATIONS IN SECONDARY-ELECTRON EMISSION DURING THE GROWTH OF GAAS BY MBE

被引：11

作者：

ERICKSON, LP

LONGERBONE, MD

YOUNGMAN, RC

DIES, BE

机构：

[1] Perkin-Elmer Molecular Beam Epitaxy,, Eden Prairie, MN, USA, Perkin-Elmer Molecular Beam Epitaxy, Eden Prairie, MN, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90364-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：55 / 58

页数：4

共 14 条

[1]

COHEN PI, 1986, COMMUNICATION

[2] TEMPORAL INTENSITY VARIATIONS IN RHEED PATTERNS DURING FILM GROWTH OF GAAS BY MBE [J].

DOBSON, PJ ;

NORTON, NG ;

NEAVE, JH ;

JOYCE, BA .

VACUUM, 1983, 33 (10-1) :593-596

[3]

HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1

[4]

HARRIS JJ, 1981, SURF SCI, V108, pL444, DOI 10.1016/0039-6028(81)90440-4

[5] ARSENIC-INDUCED INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENTS [J].

LEWIS, BF ;

FERNANDEZ, R ;

MADHUKAR, A ;

GRUNTHANER, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :560-563

[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS [J].

LEWIS, BF ;

GRUNTHANER, FJ ;

MADHUKAR, A ;

LEE, TC ;

FERNANDEZ, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1317-1322

[7] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ ;

NORTON, N .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8

[8] PHASE-LOCKED EPITAXY USING RHEED INTENSITY OSCILLATION [J].

SAKAMOTO, T ;

FUNABASHI, H ;

OHTA, K ;

NAKAGAWA, T ;

KAWAI, NJ ;

KOJIMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09) :L657-L659

[9]

VANHOVE J, 1983, COMMUNICATION

[10] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE [J].

VANHOVE, JM ;

LENT, CS ;

PUKITE, PR ;

COHEN, PI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :741-746

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