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A RHEED AND REFLECTANCE ANISOTROPY STUDY OF THE MBE GROWTH OF GAAS, ALAS AND INAS ON GAAS(001)

被引：16
作者：
ARMSTRONG, SR
HOARE, RD
PEMBLE, ME
POVEY, IM
STAFFORD, A
TAYLOR, AG
JOYCE, BA
NEAVE, JH
KLUG, DR
ZHANG, J
机构：
[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,POB 88,SACKVILLE ST,MANCHESTER M60 1QD,LANCS,ENGLAND
[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,BLACKETT LAB,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
[3] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND
[4] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT PURE & APPL BIOL,LONDON SW7 2BZ,ENGLAND
来源：
SURFACE SCIENCE | 1992年 / 274卷 / 02期
关键词：
D O I：
10.1016/0039-6028(92)90530-J
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
MBE growth of GaAs, AlAs and InAs on GaAs(001) has been monitored in real time, using simultaneous reflection high-energy electron diffraction (RHEED) and reflection anisotropy (RA) measurements, the RA measurements all being made with a fixed wavelength laser source operating at 647 nm. For the growth of GaAs and AlAs on GaAs(100), RA oscillations which occurred during the bilayer growth are explained in terms of the variation in the anisotropic distribution of surface "dimer" bonds during the growth process. RA data obtained during the growth of InAs/GaAs heterostructures are presented and discussed in relation to the influence of surface roughening upon both the RA and RHEED measurements.
引用
收藏
页码：263 / 269
页数：7
相关论文
共 18 条
[1]   INSITU CHARACTERIZATION BY REFLECTANCE DIFFERENCE SPECTROSCOPY OF III-V MATERIALS AND HETEROJUNCTIONS GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
ACHER, O ;
OMNES, F ;
RAZEGHI, M ;
DREVILLON, B .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 5 (02) :223-227
[2]  
ARMSTRONG SK, UNPUB
[3]   LASER-SURFACE DIAGNOSTICS OF GAAS GROWTH-PROCESSES .2. REFLECTANCE ANISOTROPY STUDIES OF GAAS GROWTH BY MBE [J].
ARMSTRONG, SR ;
PEMBLE, ME ;
TAYLOR, AG ;
JOYCE, BA ;
NEAVE, JH ;
ZHANG, J ;
KLUG, DA .
APPLIED SURFACE SCIENCE, 1992, 54 :493-496
[4]   REFLECTANCE AND REFLECTANCE ANISOTROPY MEASUREMENTS OF THE PHOTOELECTROCHEMICAL DEPOSITION OF GOLD ON P-TYPE GALLIUM-ARSENIDE (100) ELECTRODES [J].
ARMSTRONG, SR ;
TAYLOR, AG ;
PEMBLE, ME .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 :S85-S89
[5]   DIRECT OPTICAL MEASUREMENT OF SURFACE DIELECTRIC RESPONSES - INTERRUPTED GROWTH ON (001) GAAS [J].
ASPNES, DE ;
CHANG, YC ;
STUDNA, AA ;
FLOREZ, LT ;
FARRELL, HH ;
HARBISON, JP .
PHYSICAL REVIEW LETTERS, 1990, 64 (02) :192-195
[6]   REFLECTANCE-DIFFERENCE SPECTROSCOPY - A NEW PROBE OF CRYSTAL-GROWTH BY MBE AND OMCVD [J].
ASPNES, DE .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (05) :1056-1063
[7]   OPTICAL STUDIES OF MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT ;
KELLY, MK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1127-1131
[8]   REFLECTANCE-DIFFERENCE SPECTROSCOPY SYSTEM FOR REAL-TIME MEASUREMENTS OF CRYSTAL-GROWTH [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
APPLIED PHYSICS LETTERS, 1988, 52 (12) :957-959
[9]  
BRADT O, 1991, J CRYST GRWOTH, V111, P383
[10]   APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY (RDS) TO MIGRATION-ENHANCED EPITAXY (MEE) GROWTH OF GAAS [J].
BRIONES, F ;
HORIKOSHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1990, 29 (06) :1014-1021
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