A COMPARISON OF MODELS FOR PHONON-SCATTERING IN SILICON INVERSION-LAYERS

被引：17

作者：

GAMIZ, F

LOPEZVILLANUEVA, JA

机构：

[1] Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Avd. Fuenteneuva, s/n

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 08期

关键词：

D O I：

10.1063/1.359500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-dimensional (2D) and quasi-two-dimensional (Q2D) models for phonon scattering in Si-(100) inversion layers are compared. An analytical expression for an electron mobility component limited by phonons, recently reported with the 2D model, is modified by using the Q2D approach. © 1995 American Institute of Physics.

引用

页码：4128 / 4129

页数：2

共 17 条

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