AN ANALYTICAL EXPRESSION FOR PHONON-LIMITED ELECTRON-MOBILITY IN SILICON-INVERSION LAYERS

被引：10

作者：

GAMIZ, F

BANQUERI, J

MELCHOR, I

CARCELLER, JE

CARTUJO, P

LOPEZVILLANUEVA, JA

机构：

[1] Departamento de Electrónica Y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, 18071 Granada, Avda. Fuentenueva

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 05期

关键词：

D O I：

10.1063/1.354550

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A complete Monte Carlo study of phonon-limited electron mobility in (100) silicon-inversion layers has been carried out. It has been determined advantageous to consider more than three energy subbands for electron motion. First-order intervalley scattering has also been shown to play an important role in ohmic transport. The results of the Monte Carlo simulation can be fitted by a simple analytical expression that coincides with the phonon-limited mobility for the bulk in the zero transverse-electric-field limit.

引用

页码：3289 / 3292

页数：4

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