ELECTRICAL, SEM, AND TEM STUDIES ON ZNTE .2. IMPURITY SEGREGATION DURING LONG ANNEALING

被引:11
作者
BENSAHEL, D [1 ]
DUPUY, M [1 ]
机构
[1] CEN,DIV CRISTALLOGENESE & RECH MAT,ELECTR & TECHNOL LAB,F-38041 GRENOBLE,FRANCE
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 56卷 / 01期
关键词
D O I
10.1002/pssa.2210560110
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The contrast obtained after long thermal annealing in high purity ZnTe, by SEM in the cathodoluminescence mode and by TEM is investigated. The contrast variations are due to segregation or extraction of residual impurities (LiZn, CuZn, AgZn) which control the electrical and optical properties of the ZnTe. These studies allow to approach the self‐compensation problem in terms of limited solubilities of impurities, function of stoichiometry and temperature, the acceptor reserve being in the defects (inclusions, grain, and subgrain boundaries). Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
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页码:99 / 109
页数:11
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