DAMAGE FORMED BY SI+ IMPLANTATION IN GAAS

被引：6

作者：

HARA, T

MURAKI, T

TAKEDA, S

UCHITOMI, N

KITAURA, Y

GAO, GB

机构：

[1] TOSHIBA RES & DEV CTR, ULSI LABS, KAWASAKI, KANAGAWA 210, JAPAN

[2] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 10B期

关键词：

GALLIUM ARSENIDE; ION IMPLANTATION; DOSE MONITORING; DAMAGE PROFILE;

D O I：

10.1143/JJAP.33.L1435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Damage formed by low-dose Si+ implantation is studied. Variation of damage density with dose in Si+ implantation at 50 keV is measured at doses from 3.0 x 10(10) to 1.0 x 10(14) ions/cm(2) by the photoacoustic displacement (PAD) technique. A close correlation has also been found between the PAD value and ion implantation dose in low-dose ion implantation. Ion implantation dose can be monitored down to 3.0 x 10(10) ions/cm(2) by this technique. This dose detection limit is much lower than that of other methods. The in-depth damage profile can also be measured by differentiating the observed PAD values with depth.

引用

页码：L1435 / L1437

页数：3

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