DAMAGE DEPTH PROFILES IN ION-IMPLANTED SILICON BY THE PHOTOACOUSTIC DISPLACEMENT TECHNIQUE

被引：8

作者：

HARA, T

MURAKI, T

SAKURAI, M

TAKEDA, S

机构：

[1] Electrical Engineering, Hosei University, Koganei Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6A期

关键词：

ION IMPLANTATION; DAMAGE; DEPTH PROFILE; PHOTOACOUSTIC EFFECT; DAMAGE MEASUREMENT;

D O I：

10.1143/JJAP.32.2577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Damage density measurement for ion-implanted silicon is studied, where the density is measured using Rutherford backscattering spectrometry (RBS) and a newly developed photoacoustic displacement (PAD) technique. Since correlation is obtained between the observed PAD and quantitative damage density in ion-implanted silicon at 150 keV at a dose of 2.0 X 10(15) ions/cm2, damage density can be determined quantitatively from the PAD measurement at the surface. A damage density depth profile can also be obtained using the differential PAD measurement. The observed profile agrees well with the ones of the displaced atom density obtained by RBS measurement and Monte Carlo simulation.

引用

页码：2577 / 2581

页数：5

共 9 条

[1] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[2]

CHU WK, 1978, BACKSCATTERING SPECT, P26

[3]

HARA T, 1992, NUCL INSTRUM METHODS, V44, P2441

[4]

HARA T, 1992, P SEMI MATERIALS MET, P71

[5] ION IMPLANT MONITORING WITH THERMAL WAVE TECHNOLOGY [J].

SMITH, WL ;

ROSENCWAIG, A ;

WILLENBORG, DL .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :584-586

[6] A NEW METHOD OF PHOTOTHERMAL DISPLACEMENT MEASUREMENT BY LASER INTERFEROMETRIC PROBE - ITS MECHANISM AND APPLICATIONS TO EVALUATION OF LATTICE DAMAGE IN SEMICONDUCTORS [J].

SUMIE, S ;

TAKAMATSU, H ;

NISHIMOTO, Y ;

HORIUCHI, T ;

NAKAYAMA, H ;

KANATA, T ;

NISHINO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (11) :3575-3583

[7] PHOTODISPLACEMENT MEASUREMENT BY INTERFEROMETRIC LASER PROBE [J].

TAKAMATSU, H ;

NISHIMOTO, Y ;

NAKAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (12) :2847-2850

[8] DOSE AND DAMAGE MEASUREMENTS IN LOW-DOSE ION-IMPLANTATION IN SILICON BY PHOTOACOUSTIC DISPLACEMENT AND MINORITY-CARRIER LIFETIME [J].

WASHIDZU, G ;

HARA, T ;

ICHIKAWA, R ;

TAKAMATSU, H ;

SUMIE, S ;

NISHIMOTO, Y ;

NAKAI, Y ;

HASHIZUME, H ;

MIYOSHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (6A) :L1025-L1027

[9]

WOLF HF, 1969, SILICON SEMICONDUCTO, P62

← 1 →