PICOSECOND TIME-RESOLVED REFLECTIVITY OF POROUS SILICON

被引：5

作者：

BUGAYEV, AA

KHAKHAEV, IA

ZUBRILOV, AS

机构：

[1] Ioffe Physical and Technical Institute

来源：

OPTICS COMMUNICATIONS | 1994年 / 106卷 / 1-3期

关键词：

D O I：

10.1016/0030-4018(94)90058-2

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The nonlinear optical properties of porous silicon films are studied under band-to-band picosecond pulse excitation. The negative value of the reflectivity change on a picowcond time-scale is explained by the increased absorption of porous silicon as a result of free-carrier generation. This conclusion is well supported by the temporal evolution of the reflectivity spectrum where a blue shift of interference fringes is clearly observed. The origin of the rapid recombination of the charge carriers (approximately 100 ps) is attributed to the influence of either quantum confinement effects or high concentration of surface-related defects.

引用

收藏

页码：65 / 68

页数：4

相关论文

共 17 条

[1] PICOSECOND SPECTROSCOPY OF SEMICONDUCTORS [J].

AUSTON, DH ;

MCAFEE, S ;

SHANK, CV ;

IPPEN, EP ;

TESCHKE, O .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :147-150

[2] PHOTOLUMINESCENCE OF HIGH POROSITY AND OF ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS [J].

BSIESY, A ;

VIAL, JC ;

GASPARD, F ;

HERINO, R ;

LIGEON, M ;

MULLER, F ;

ROMESTAIN, R ;

WASIELA, A ;

HALIMAOUI, A ;

BOMCHIL, G .

SURFACE SCIENCE, 1991, 254 (1-3) :195-200

[3] TIME-RESOLVED SPECTROSCOPY OF SPONTANEOUS LUMINESCENCE OF CDSSE1-X QUANTUM DOTS [J].

BUGAYEV, A ;

KALT, H ;

KUHL, J ;

RINKER, M .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (01) :75-80

[4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[5] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].

CULLIS, AG ;

CANHAM, LT .

NATURE, 1991, 353 (6342) :335-338

[6] EVIDENCE FOR QUANTUM CONFINEMENT IN THE PHOTOLUMINESCENCE OF POROUS SI AND SIGE [J].

GARDELIS, S ;

RIMMER, JS ;

DAWSON, P ;

HAMILTON, B ;

KUBIAK, RA ;

WHALL, TE ;

PARKER, EHC .

APPLIED PHYSICS LETTERS, 1991, 59 (17) :2118-2120

[7] TEMPERATURE-DEPENDENCE OF THE RADIATIVE LIFETIME IN POROUS SILICON [J].

HOOFT, GW ;

KESSENER, YARR ;

RIKKEN, GLJA ;

VENHUIZEN, AHJ .

APPLIED PHYSICS LETTERS, 1992, 61 (19) :2344-2346

[8] VISIBLE PHOTOLUMINESCENCE OF SILICON-BASED NANOSTRUCTURES - POROUS SILICON AND SMALL SILICON-BASED CLUSTERS [J].

KANEMITSU, Y ;

SUZUKI, K ;

UTO, H ;

MASUMOTO, Y ;

MATSUMOTO, T ;

KYUSHIN, S ;

HIGUCHI, K ;

MATSUMOTO, H .

APPLIED PHYSICS LETTERS, 1992, 61 (20) :2446-2448

[9]

KUHL J, 1989, ADV SOLID STATE PHYS, V29, P157

[10]

Moss T. S., 1973, SEMICONDUCTOR OPTO E