VOLUME EXPANSION OF DIAMOND DURING ION-IMPLANTATION

被引：95

作者：

PRINS, JF ^{[1
]}

DERRY, TE ^{[1
]}

SELLSCHOP, JPF ^{[1
]}

机构：

[1] UNIV WITWATERSRAND,WITS CSIR,SCHONLAND RES CTR NUCL SCI,JOHANNESBURG 2000,SOUTH AFRICA

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.34.8870

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8870 / 8874

页数：5

共 12 条

[1] THRESHOLD ENERGY FOR ATOMIC DISPLACEMENT IN DIAMOND [J].

BOURGOIN, JC ;

MASSARANI, B .

PHYSICAL REVIEW B, 1976, 14 (08) :3690-3694

[2]

CLARK CD, 1961, DISCUSS FARADAY SOC, V31, P96

[3] HARD CONDUCTING IMPLANTED DIAMOND LAYERS [J].

HAUSER, JJ ;

PATEL, JR ;

RODGERS, JW .

APPLIED PHYSICS LETTERS, 1977, 30 (03) :129-130

[4] HOPPING CONDUCTIVITY IN C-IMPLANTED AMORPHOUS DIAMOND, OR HOW TO RUIN A PERFECTLY GOOD DIAMOND [J].

HAUSER, JJ ;

PATEL, JR .

SOLID STATE COMMUNICATIONS, 1976, 18 (07) :789-790

[5]

LANG A, COMMUNICATION

[6] VOLUME EXPANSION OF ION-IMPLANTED DIAMOND [J].

MABY, EW ;

MAGEE, CW ;

MOREWOOD, JH .

APPLIED PHYSICS LETTERS, 1981, 39 (02) :157-158

[7] ONSET OF HOPPING CONDUCTION IN CARBON-ION-IMPLANTED DIAMOND [J].

PRINS, JF .

PHYSICAL REVIEW B, 1985, 31 (04) :2472-2478

[8] ELECTRICAL-RESISTANCE OF DIAMOND IMPLANTED AT LIQUID-NITROGEN TEMPERATURE WITH CARBON-IONS [J].

PRINS, JF .

RADIATION EFFECTS LETTERS, 1983, 76 (03) :79-82

[9]

PRINS JF, UNPUB NUCL INSTRUM M

[10]

PRINS JF, UNPUB

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