VOLUME EXPANSION OF ION-IMPLANTED DIAMOND

被引:37
作者
MABY, EW
MAGEE, CW
MOREWOOD, JH
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D O I
10.1063/1.92645
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O59 [应用物理学];
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页码:157 / 158
页数:2
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  • [1] BORON-IMPLANTED PROFILES IN DIAMOND
    BLANCHARD, B
    COMBASSON, JL
    BOURGOIN, JC
    [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 7 - 8
  • [2] DEPTH PROFILE OF ANTIMONY IMPLANTED INTO DIAMOND
    BRAUNSTEIN, G
    BERNSTEIN, T
    CARSENTY, U
    KALISH, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5731 - 5735
  • [3] HARD CONDUCTING IMPLANTED DIAMOND LAYERS
    HAUSER, JJ
    PATEL, JR
    RODGERS, JW
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (03) : 129 - 130
  • [4] INTRINSIC LIMITATIONS OF DOPING DIAMONDS BY HEAVY-ION IMPLANTATION
    KALISH, R
    DEICHER, M
    RECKNAGEL, E
    WICHERT, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6870 - 6872
  • [5] SECONDARY ION QUADRUPOLE MASS-SPECTROMETER FOR DEPTH PROFILING-DESIGN AND PERFORMANCE EVALUATION
    MAGEE, CW
    HARRINGTON, WL
    HONIG, RE
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (04) : 477 - 485
  • [6] X-RAY STUDY OF NEUTRON IRRADIATED DIAMONDS
    VANCE, ER
    [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (03): : 257 - &
  • [7] ION-IMPLANTATION INTO DIAMOND
    VAVILOV, VS
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (3-4): : 229 - 236
  • [8] VOLUME EXPANSION AND OXYGEN INCORPORATION IN DEUTERON-BOMBARDED SILICON
    WITTMAACK, K
    STAUDENMAIER, G
    [J]. JOURNAL OF NUCLEAR MATERIALS, 1980, 93-4 (OCT) : 581 - 587