THE LOWER YIELD-POINT OF INP AND GAAS

被引：19

作者：

SIETHOFF, H

VOLKL, J

GERTHSEN, D

BRION, HG

机构：

[1] UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER

[2] UNIV GOTTINGEN,INST MET PHYS,D-3400 GOTTINGEN,FED REP GER

[3] KRISTALLLAB,GOTTINGEN CLAUSTHAL,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 101卷 / 01期

关键词：

D O I：

10.1002/pssa.2211010134

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K13 / K18

页数：6

共 17 条

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[5]

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[6]

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[7] HALL-EFFECT OF PLASTICALLY DEFORMED GAAS [J].

GERTHSEN, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (02) :527-537

[8] TEMPERATURE-DEPENDENCE FOR THE ONSET OF PLASTIC YIELD IN UNDOPED AND INDIUM-DOPED GAAS [J].

HOBGOOD, HM ;

MCGUIGAN, S ;

SPITZNAGEL, JA ;

THOMAS, RN .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1654-1655

[9]

IMAI M, 1983, PHILOS MAG A, V47, P599, DOI 10.1080/01418618308245248

[10]

KARMOUDA M, 1984, THESIS LILLE

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