THE INFLUENCE OF GROWTH-CONDITIONS ON THE EQUILIBRIUM STATES IN A-SI-H

被引：4

作者：

STREET, RA

WINER, K

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(89)90677-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：645 / 647

页数：3

共 7 条

KAKALIOS, J ;

STREET, RA ;

JACKSON, WB .

SMITH, ZE ;

WAGNER, S .

[3] THERMAL-EQUILIBRIUM PROCESSES IN AMORPHOUS-SILICON [J].

STREET, RA ;

KAKALIOS, J ;

TSAI, CC ;

HAYES, TM .

PHYSICAL REVIEW B, 1987, 35 (03) :1316-1333

[4] MECHANISMS OF THERMAL EQUILIBRATION IN DOPED AMORPHOUS-SILICON [J].

STREET, RA ;

HACK, M ;

JACKSON, WB .

PHYSICAL REVIEW B, 1988, 37 (08) :4209-4224

[5]

STREET RA, IN PRESS PHYS REV B

[6]

STUTZMAN M, IN PRESS PHIL MAG

[7] WEAK BOND DANGLING BOND CONVERSION IN AMORPHOUS-SILICON [J].

STUTZMANN, M .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 56 (01) :63-70