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- [1] DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 3 - 14ADLER, D
- [2] DANGLING BOND IN A SI-H[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2203 - 2206BARYAM, YJOANNOPOULOS, JD
- [3] HYPERFINE STUDIES OF DANGLING BONDS IN AMORPHOUS-SILICON[J]. PHYSICAL REVIEW B, 1986, 33 (05): : 3006 - 3011BIEGELSEN, DKSTUTZMANN, M
- [4] SINGLE AND DOUBLE CARRIER INJECTION IN A-SI-H[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 363 - 368DENBOER, WGEERTS, MJONDRIS, MWENTINCK, HM
- [5] PHOTOINDUCED CHANGES IN GLOW-DISCHARGE-DEPOSITED AMORPHOUS SILICON - STAEBLER-WRONSKI EFFECT[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (04): : 349 - 356ELLIOTT, SR
- [6] DEFECT STATES IN AMORPHOUS SILICON[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04): : 325 - 334ELLIOTT, SR
- [7] METASTABLE DEFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2215 - 2218HEPBURN, ARMARSHALL, JMMAIN, CPOWELL, MJVANBERKEL, C
- [8] OBSERVATION OF A REVERSIBLE FIELD-INDUCED DOPING EFFECT IN HYDROGENATED AMORPHOUS-SILICON[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (06) : 421 - 424LANG, DVCOHEN, JDHARBISON, JP
- [9] A CHEMICAL-BOND APPROACH TO DOPING, COMPENSATION AND PHOTOINDUCED DEGRADATION IN AMORPHOUS-SILICON[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (04): : 243 - 250MULLER, GKALBITZER, SMANNSPERGER, H
- [10] PHOTOINDUCED DEGRADATION OF ALPHA-SI-H DIODES WITH AN NIN STRUCTURE[J]. SOLID STATE COMMUNICATIONS, 1984, 49 (05) : 493 - 495PFLEIDERER, HKUSIAN, WKRUHLER, W