PHOTOINDUCED DEGRADATION OF ALPHA-SI-H DIODES WITH AN NIN STRUCTURE

[1] EFFECT OF ANNEALING AND LIGHT EXPOSURE ON THE FIELD-EFFECT DENSITY OF STATES IN GLOW-DISCHARGE A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04): : 407 - 434

[2] ON THE MECHANISM OF LIGHT-INDUCED EFFECTS IN HYDROGENATED AMORPHOUS-SILICON ALLOYS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 588 - 589

[3] PHOTOGENERATED CARRIER CONDUCTION MECHANISMS FOR SCHOTTKY A-SI-H SOLAR-CELLS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1983, 75 (01): : 283 - 288

[4] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 208 - 211

[5] Kruhler W., 1982, Fourth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference, P754

[6] THE DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (04): : 377 - 389

[7] ANNEALING AND LIGHT-INDUCED-CHANGES IN THE FIELD-EFFECT CONDUCTANCE OF AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5068 - 5078

[8] PHOTOINDUCED EFFECTS IN HYDROGENATED AMORPHOUS-SILICON P-I-N-DIODES [J]. SOLID-STATE ELECTRONICS, 1982, 25 (10) : 1059 - 1062

[9] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J]. JOURNAL DE PHYSIQUE, 1978, 39 (11): : 1241 - 1246

[10] OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3262 - 3268

[1] EFFECT OF ANNEALING AND LIGHT EXPOSURE ON THE FIELD-EFFECT DENSITY OF STATES IN GLOW-DISCHARGE A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04): : 407 - 434

[2] ON THE MECHANISM OF LIGHT-INDUCED EFFECTS IN HYDROGENATED AMORPHOUS-SILICON ALLOYS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 588 - 589

[3] PHOTOGENERATED CARRIER CONDUCTION MECHANISMS FOR SCHOTTKY A-SI-H SOLAR-CELLS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1983, 75 (01): : 283 - 288

[4] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 208 - 211

[5] Kruhler W., 1982, Fourth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference, P754

[6] THE DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (04): : 377 - 389

[7] ANNEALING AND LIGHT-INDUCED-CHANGES IN THE FIELD-EFFECT CONDUCTANCE OF AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5068 - 5078

[8] PHOTOINDUCED EFFECTS IN HYDROGENATED AMORPHOUS-SILICON P-I-N-DIODES [J]. SOLID-STATE ELECTRONICS, 1982, 25 (10) : 1059 - 1062

[9] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J]. JOURNAL DE PHYSIQUE, 1978, 39 (11): : 1241 - 1246

[10] OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3262 - 3268