PHOTOINDUCED EFFECTS IN HYDROGENATED AMORPHOUS-SILICON P-I-N-DIODES

被引：8

作者：

SAKATA, I

HAYASHI, Y

YAMANAKA, M

KARASAWA, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 10期

关键词：

D O I：

10.1016/0038-1101(82)90033-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1059 / 1062

页数：4

共 18 条

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[2]

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[7] NEW EVIDENCE FOR DEFECT CREATION BY HIGH OPTICAL-EXCITATION IN GLOW-DISCHARGE AMORPHOUS-SILICON [J].

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[9] LIGHT-INDUCED AGING EFFECTS IN SCHOTTKY DIODES ON SPUTTERED HYDROGENATED AMORPHOUS-SILICON (A-SIH) - INTERPRETATION OF THE PHOTO-VOLTAIC STABILITY [J].

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[10]

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