PHOSPHORUS CONCENTRATION IN HYDROGENATED AMORPHOUS SILICON USING ION-IMPLANTED REFERENCES

被引：14

作者：

THOMAS, JH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 06期

关键词：

SEMICONDUCTING FILMS - Amorphous;

D O I：

10.1116/1.570660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The phosphorus content in glow-discharge deposited hydrogenated-amorphous silicon film has been found using Auger electron spectroscopy. Precision low concentration phosphorus ion-implants into hydrogenated amorphous silicon were utilized as standards to accurately determine the sensitivity factor for phosphorus in hydrogenated amorphous silicon.

引用

页码：1306 / 1308

页数：3

共 8 条

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