ION-IMPLANTED STANDARDS FOR SECONDARY ION MASS-SPECTROMETRIC DETERMINATION OF THE 1A-7A GROUP ELEMENTS IN SEMICONDUCTING MATRICES

被引：81

作者：

LETA, DP ^{[1
]}

MORRISON, GH ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT CHEM,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1021/ac50053a032

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：514 / 519

页数：6

共 16 条

[1] BAKER JE, 1979, AUG INT C SIMS II ST
[2] Bernheim M., 1973, Radiation Effects, V18, P231, DOI 10.1080/00337577308232127
[3] UNIFIED EXPLANATION FOR SECONDARY ION YIELDS
DELINE, VR
EVANS, CA
WILLIAMS, P
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 578 - 580
[4] DEVLIN WJ, I PHYS C SER, P510
[5] ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI
DIETRICH, HB
WEISENBERGER, WH
COMAS, J
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 182 - 184
[6] DOBROTT RD, 1976 FACSS C PHIL
[7] QUANTITATIVE ION-IMPLANTATION - THEORETICAL ASPECTS
GRIES, WH
[J]. INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1979, 30 (02): : 97 - 112
[8] Hofker W. K., 1973, Applied Physics, V2, P265, DOI 10.1007/BF00889509
[9] ION-IMPLANTATION FOR INSITU QUANTITATIVE ION MICROPROBE ANALYSIS
LETA, DP
MORRISON, GH
[J]. ANALYTICAL CHEMISTRY, 1980, 52 (02) : 277 - 280
[10] Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31