SI-GE HETEROEPITAXIAL STRUCTURES EVAPORATED IN ULTRA-HIGH VACUUM

[1] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &

[2] CRYSTALLINE STRUCTURE OF GERMANIUM FILMS ON SILICON SUBSTRATES .1. INVESTIGATION OF PERFECTION OF GERMANIUM HETEROEPITAXIAL FILMS ON SILICON BY X-RAY DIFFRACTION METHODS [J]. THIN SOLID FILMS, 1971, 7 (02) : 117 - +

[3] HARASZTH.ES, 1970, VIDE, V25, P264

[4] KANERVA HKJ, 1969, Z NATURFORSCH PT A, VA 24, P1343

[5] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165

[6] PFEIFER J, 1970, KRISTALL TECHNIK, V5, P85

[7] SZENTPALI B, 1970, P INT C HETEROJUNCTI, P1

[8] CRYSTALLINE STRUCTURE OF GERMANIUM FILMS ON SILICON SUBSTRATES .2. METALLOGRAPHICAL STUDIES OF GE ON SI HETEROEPITAXIAL FILM STRUCTURE [J]. THIN SOLID FILMS, 1971, 7 (02) : 127 - +

[1] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &

[2] CRYSTALLINE STRUCTURE OF GERMANIUM FILMS ON SILICON SUBSTRATES .1. INVESTIGATION OF PERFECTION OF GERMANIUM HETEROEPITAXIAL FILMS ON SILICON BY X-RAY DIFFRACTION METHODS [J]. THIN SOLID FILMS, 1971, 7 (02) : 117 - +

[3] HARASZTH.ES, 1970, VIDE, V25, P264

[4] KANERVA HKJ, 1969, Z NATURFORSCH PT A, VA 24, P1343

[5] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165

[6] PFEIFER J, 1970, KRISTALL TECHNIK, V5, P85

[7] SZENTPALI B, 1970, P INT C HETEROJUNCTI, P1

[8] CRYSTALLINE STRUCTURE OF GERMANIUM FILMS ON SILICON SUBSTRATES .2. METALLOGRAPHICAL STUDIES OF GE ON SI HETEROEPITAXIAL FILM STRUCTURE [J]. THIN SOLID FILMS, 1971, 7 (02) : 127 - +