MODELING OF ANISOTROPIC ETCHING IN SILICON-BASED SENSOR APPLICATION

被引：23

作者：

CAMON, H

GUE, AM

DANEL, JS

DJAFARIROUHANI, M

机构：

[1] CEA,LETI,DOPT,CENG 85X,F-38041 GRENOBLE,FRANCE

[2] UNIV TOULOUSE 3,PHYS SOLIDE LAB,F-31062 TOULOUSE,FRANCE

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 33卷 / 1-2期

关键词：

D O I：

10.1016/0924-4247(92)80237-W

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Preliminary results of an atomic-scale simulation of the wet-etching process are reported. This model assumes an atomic-etching probability depending on the local surface configuration. The cases of flat Si(100), rough Si(100), and flat Si(111)-oriented surfaces are examined.

引用

页码：103 / 105

页数：3

共 6 条

[1] ANISOTROPIC ETCHING OF SILICON - A MODEL DIFFUSION-CONTROLLED REACTION [J].